This Ohkawa laboratory was founded at 1998 April.

GaN and related group-III nitride semiconductors have many attractive applications as a light source in optoelectronics and as an electronic device such as light-emitting diodes (LEDs) in region from ultra-violet (UV) to amber, violet laser diodes (LDs), cold cathodes, UV photodetectors, and high-power&frequency field effect transistors (FETs). Nitrides have other unique characteristics compared to other semiconductors. These are not toxic.  Our laboratory also pays attention to environmental issue. We use non-toxic materials and take safety measurements.

We grow Nitrides by an MOVPE system as shown in pictures (99.1.26 and 99.11.17) at this homepage. The system is designed especially for Nitrides growth and has a potential for future development.

Growth of Nitrides even by MOVPE is not easy, and its mechanism is not clear yet. We study the mechanism by using a CFD  software including chemical reactions and thermal properties.

We study optical property in region from UV to IR of 30 ƒÊm, electrical property by a Hall  effect measurement system, and photochemical property such as  chemical etching and catalysis effect in Nitrides-solution system.

Currntly, a development of device process room is under way, torward to the practical applications. We will try to fabricate the nitride devices such as LEDs, LDs, and HEMTs.