| Publications |
|
Paper List 102.gLarge misorientation of GaN films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxyh K. Kusakabe, S. Ando, K. Ohkawa @@@ Journal of Crystal Growth 298, 293-296 (2007). 101.gInfluence of PolymerFormation on Metalorganic VaporPhase Epitaxial Growth of AlN.h T. Uchida, K. Kusakabe, K. Ohkawa @@@ Journal of Crystal Growth 304, 133-140 (2007). 100.gPlasma etching treatment for surface modification of boron-doped diamond electrodesh T. Kondo, H. Ito, K. Kusakabe, K. Ohkawa, Y. Einaga, A. Fujishima, T. Kawai @@@ Electrochimica acta 52, 3841-3848 (2007). 99.gPhotoelectrochemical Reactions and H2 Generation at Zero Bias Optimized by Carrer Concentration of @@ n-Type GaNh M. Ono, K. Fujii, T. Ito, Y. Iwaki, T. Yao, K. Ohkawa @@ Journal of Chemical Physics 126, 054708 (2007). 98.gInvestigation of Surface Morphology of n-type GaN after Photoelectrochemical Reaction in Various Solutions for H2 Gas Generationh K. Fujii, T. Ito, M. Ono, Y. Iwaki, T. Yao, K. Ohkawa @@ physica status solidi (c) (accepted). 97.gCathodoluminescence characterization of (1120)-oriented InGaN GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy h K. Kusakabe, T. Furuzuki, K. Ohkawa @@ physica status solidi(c) (accepted). 96.gBand-edge Energies and Photoelectrochemical Properties of n-Type AlxGa1-xN and InyGa1-yN alloysh @@ K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, K. Ohkawa @@ Journal of the Electrochemical Society 154 (2) B175-B179 (2007). 95.gFabrication and optical properties of blue LEDs with silica microsphere coating h K. Kusakabe, S. Funazaki, K. Okamoto, S. Nishizawa, K. Ohkawa @@ physica status solidi (c) 4, 25-28 (2007). 94.gCharacterization of lattice mosaic of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase @@ epitaxyh K. Kusakabe, S. Ando, K. Ohkawa Materials Research Society Symposium proceedings 892, 659-663 (2006). 93.gCharge transfer of n-type GaN photoelectrolysis in HCl solution for H2 gas generation at a counterelectrodeh K. Fujii, M. Ono, T. Ito, K. Ohkawa Material Research Society Symposium Proceedings 0885-A11-04.1`04.6 (2006). 92.gAnalysis of TMGa/NH3/H2 reaction system in GaN-MOVPE growth computational simulationh A. Hirako, S. Koiso, K. Ohkawa physica status solidi (a) 203, 1716-1719 (2006). 91.gHydrogen generation from aqueous water using n-GaN by photoassisted electrolysish K. Fujii, K. Ohkawa physica status solidi (c) 3, 2270-2273 (2006). 90.gMorphological evalution of epitaxial GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxyh K. Kusakabe, K. Ohkawa physica status solidi (c) 3, 1807-1810 (2006). 89.gLocal structural characterization of epitaxial a-plane InGaN thin films by transmission electron microscopyh T. Yamazaki, K. Kusakabe, N. Nakanishi, K. Ohkawa, I. Hashimoto physica status solidi (c) 3, 1738-1741 (2006). 88.gIn concentration and tilt of the a-plane (11-20) InGaN/GaN film by TEM analysish N. Nakanishi, K. Kusakabe, T. Yamazaki, K. Ohkawa, I. Hashimoto Physica B 376-377, 527-531 (2006). 87.gImprovement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase @@@@ epitaxyh K. Kusakabe, T. Furuzuki, K. Ohkawa Physica B 376-377, 520-522 (2006). 86.gFormation of polymers in TMGa/NH3/H2 system under GaN growthh A. Hirako, K. Ohkawa Journal of Crystal Growth 289, 428-432 (2006). 85.gBias-assisted H2 gas generation in HCl and KOH solutions using n-type GaN photoelectrodeh K. Fujii, K. Ohkawa Journal of the Electrochemical Society 153, A468-A471 (2006). 84.gMorphological characteristics of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxyh K. Kusakabe, K. Ohkawa Japanese Journal of Applied Physics 44, 7931-7933 (2005).h 83.gPhotoelectrochemical properties of InGaN for H2 generation from aqueous waterh Katsushi Fujii, Kazuhide Kusakabe, Kazuhiro Ohkawa Japanese Journal of Applied Physics 44, 7433-7435 (2005). 82.gPhotoelectrochemical properties of p-type GaN in comparison with n-type GaN h K. Fujii, K. Ohkawa Japanese Journal of Applied Physics 44, L909-L911 (2005). 81.gHydrogen gas generation by splitting aqueous water using n-type GaN photoelectrode with anodic oxidation h K. Fujii, T. Karasawa, K. Ohkawa Japanese Journal of Applied Physics 44, L543-L545 (2005). 80.gEffect of thermal radiation and absorption
in GaN-MOVPE growth modeling on temperature
distribution and Pressuresh K. Kusakabe, A. Hirako, S. Tanaka, K. Ohkawa Physica Status Solidi (submitted) 76.gEnergy renormalization and binding energy of the biexcitonh M. Maute, S. Wachter, H. Kalt, K. Ohkawa, D. Hommel Physical Review B 67, 165323/1-4 (2003). 75.gCharacterization of InGaN/GaN Fibonacci superlattices grown by two-flow metalorganic vapor phase epitaxyh K. Kusakabe, K. Ohkawa Physica Status Solidi (C) 0, 2120-2123 (2003). 74.gX-ray diffraction study of InGaN/GaN superlattice interfacesh K. Kusakabe, K. Ohkawa Journal of Vacuum Science & Technology B 21(4), 1839-1843 (2003). 73.gSpatiotemporal dynamics of quantum-well
excitonsh 72.gDecomposition and uniformity of material
gases in GaN MOVPEh 71.gMidinfrared pump-probe reflection spectroscopy
of the coupled phonon-plasmon mode in GaNh 70.gGaN-MOVPE growth and its microscopic
chemistry of gaseous phase by computational
thermodynamic analysish 69.gInstability of Cl-related deep defects
in ZnSeh 68.gDisplaced substitutional phosphorus
acceptors in zinc selenideh 67.gGrowth of GaN layers by one-, two-,
and three-flow metalorganic vapor phase epitaxyh 66.gDirect evidence for the trigonal symmetry
of shallow phosphorus acceptors in ZnSeh 65.gSpin-dependent exciton-exciton interaction
in ZnSe quantum wellsh 64.gLocalization of excitons in pairs of
natural dots induced by stacking faults in
ZnSe quantum wellsh 63.gGigantic reflectance anisotropy of the
[110] face of cubic ZnSe in the excitonic
part of the spectrumh 62.gInternal photoluminescence in ZnSe homoepitaxy
and application in blue-green-orange mixed-color light-emitting
diodesh 61.gStacking-fault-induced paris of localizing
centers in ZnSe quantum wellsh 60.gRelation between spin and momentum relaxation
in ZnSe/ZnMaSSe quantum wellsh 59.gRadiative recombination centers induced
by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structuresh 58.gElectron-phonon quantum kinetics in
the strong coupling regimeh 57.gElectron-phonon quantum kinetics in
the strong-coupling regimeh 56.gDevice properties of homo- and heteroepitaxial
ZnSe-based laser diodesh 55.gHomoepitaxial laser diodes grown on
conducting and insulating ZnSe substratesh 54.gGrowth and Characterization of II-VI
Semiconductor Lasersh 53.gMeasurements of the absolute external
luminescence quantum efficiency in ZnSe/ZnMgSSe
multiple quantum
wells as a function of temperatureh 52.gMigration enhanced epitaxy of CdSe islands
on ZnSe and their optical and structural
characterizationh 51.gOptical detection of crystallographic
domains in zinc-blende crystalsh 50.gPlanar homoepitaxial laser diodes grown
on aluminium-doped ZnSe substratesh 49.gComparison of long-time delay in lasing
in homo- and heteroepitaxially grown II-VI
laser diodesh 48.gStability issues of quaternary CdZnSSe
and ternary CdZnSe quantum wells in blue-green
laser diodesh 47.gFormation of self-assembling II-VI semiconductor
nanostructures during migration enhanced
epitaxyh 46.gExciton localization in CdSe islands
buried in a quantum well of Zn1-XCdXSeh 45.gInternal photoluminescence and lifetime
of light-emitting diodes on conductive ZnSe
substratesh 44.gCdSe/ZnSe quantum structures grown by
migration enhanced epitaxy: structural and
optical investigationsh 43.gCdSe/ZnSe quantum dot structures: structural
and optical investigationh 42.gZnSe-based laser diodes and LEDs grown
on ZnSe and GaAs substratesh 41.gReal-index guided blue-green laser diode
with small beam astigmatism fabricated using
ZnO buried structureh 40.gCompound-Source Molecular Beam Epitaxy
for II-VI laser structuresh 39.gNitrogen radical dopingh 38.gBlue laser diodesh 37.gCompound-Source MBE for ZnSe-based Lasersh 36.gRole of biexciton state in excitonic
resonant nonlinearity in homoepitaxial ZnSeh 35.gCompound-Source Molecular Beam Epitaxy
for ZnCdSe/ZnSSe/ZnMgSSe Laser Structureh 34.gSpin-flip Raman scattering from shallow
and deep donor centres in nitrogen-doped
p-type zinc selenideh 33.gFree induction decay and quantum beat
of excitons in ZnSeh 32.gOptical gain in an inhomogeneously broadened
exciton systemh 31.gZnSe-based Blue and Green Lasers and MBE
Growth of II-VI Compoundsh 30.gMBE Growth of ZnSe-Based Semiconductors and
Blue-Green Lasersh 29.gBlue Semiconductor Laserh 28.gP- and n-type doping of ZnSe, and its application
for blue and green semiconductor lasersh 27.gNitrogen radical doping and growth of p-type
ZnSeh 26.gZnSe-based diode lasers with stripe-geometry
fabricated by ion bombardment" 25.gCavity parameters of ZnCdSe/ZnSe single-quantum-well
separate-confinement-heterostructure laser diodesh 24.gPhotopumped blue laser action in ZnSe-ZnMnSSe
double heterostructure grown by molecular
beam epitaxyh 23.gZnSe-based laser diodes and p-type doping
of ZnSeh 22.gCharacteristics of ZnCdSe single-quantum-well
laser diodesh 21.gZn1-XCdXSe(X=0.2-0.3) single-quantum-well laser diodes
without GaAs buffer layersh 20.gMolecular-beam epitaxial growth of p-
and n-type ZnSe homoepitaxial layersh 19.gGiant excitonic optical nonlinearity
in ZnSe grown by molecular beam epitaxyh 18.gPhotoluminescence properties of nitrogen-doped
ZnSe layers grown by molecular beam epitaxy
with ion- and 17.gGiant nonlinear phase shift at exciton
resonance in ZnSeh 16.gBlue electroluminescence from ZnSe p-n
junction light-emitting diodesh 15.gMolecular-beam epitaxial growth and
characterization of ZnS-ZnXCd1-XS@strained-layer sup erlatticesh 14.gp-type ZnSe homoepitaxial layers grown
by molecular beam epitaxy with nitrogen radical
dopingh 13.gCharacteristics of p-type ZnSe layers
grown by molecular beam epitaxy with radical
dopingh 12.gDoping of nitrogen acceptors into ZnSe
using a radical beam during MBE growthh 11.gTreatment of ZnSe substrates for homoepitaxyh 10.gMultiple states in surface lattice constant
behavior during the molecular beam epitaxial
growth of ZnTe-ZnS 9.gZnTe-ZnS strained-layer superlattices
grown by ALE and MBE: Effect of strain on
ZnTe incorporationh 8.gCharacterization of short-period ZnTe-ZnS
superlattices grown by MBEh 7.gHomoepitaxial growth of ZnSe on dry-etched
substratesh 6.gElectron and x-ray diffraction study
of ZnTe-ZnS strained-layer superlattices
grown by molecular beam epitaxyh 5.gEffect of biaxial strain on exciton luminescence
of heteroepitaxial ZnSe layersh 4.gMBE-grown ZnTe-ZnS strained-layer superlatticesh 3.gMolecular beam epitaxial growth of nitrogen-
doped ZnSe with ion doping techniqueh 2.gCharacteristics of Cl-doped ZnSe layers
grown by molecular beam epitaxyh 1.gPhotoluminescence properties of nitrogen-doped
ZnSe layers grown by molecular beam epitaxyh |
 Top Page |
