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Šw‰ï”­•\ƒŠƒXƒg








621. Preparation of Single Crystalline BiFeO3 Thin Films and Their Electronic and Atomic Structures Studied by Synchrotron Radiation
S. Nakashima, H. Fujisawa, T. Higuchi, N. Happo, A. Yasui, and T. Kinoshita, Y. Yamamoto, R. Matsumoto, K. Kimura, and K. Hayashi
CIMTEC2022, 2022.6/25-29, Italy

620. In situ manipulation of perpendicular magnetic anisotropy in half-metallic NiCo2O4 thin film by proton insertion
T. Wada, W. Namiki, T. Tsuchiya, D. Kan, Y. Shimakawa, T. Higuchi and K. Terabe
MEMRISYS-2021, Tsukuba, 11/1-4, 2021

619. Resistivity Switching of Band-Engineered VO2/Nb-TiO2 Multilayer
H. Ito, K. Yako, S. Nishi, M. Taniguchi, T. Takada and T. Higuchi
MEMRISYS-2021, Tsukuba, 11/1-4, 2021

618. Resistive switching and neuromorphic function of Pt/Ti0.96Co0.04O2-d/Pt thin films by controlling interface state
T. Takada, Y. Yamaguchi, T. Tsuchiya and T. Higuchi
34th International Microprocesses and Nanotechnology Conference (MNC 2021)

617. Anomalous Surface Ion conduction of Ce1-xSmxO2-d Thin Film with Mixed Valence State
G. Notake, D. Nishioka, U. Kobayashi1, H. Murasawa, D. Shiga, K. Horiba, H. Kumigashira, and T. Higuchi
34th International Microprocesses and Nanotechnology Conference (MNC 2021)
2021.10/26-29, Online and On-Demand

616. Structural and Electrical Properties of Fe-doped TiO2 Multilayer Thin Film
Y. Fukusihma, J. Ishida, T. Takada, H. Ito, K. Horiba, H. Kumigashira and T. Higuchi
“ú–{MRS”NŽŸ‘å‰ï (ƒIƒ“ƒ‰ƒCƒ“ŠJÃ), 2021.12/13-15

615. Control of Metal-Insulator Transition of VO2/Nb-TiO2 Multilayer Film
H. Ito, K. Yako, S. Nishi, T. Takada, M. Taniguchi and T. Higuchi
“ú–{MRS”NŽŸ‘å‰ï (ƒIƒ“ƒ‰ƒCƒ“ŠJÃ), 2021.12/13-15

614. Neuromorphic I-V function and resistive switching of Pt/Ti0.96Co0.04O2-d/Pt device
T. Takada, Y. Yamaguchi, H. Itoh, T. Tsuchiya and T. Higuchi
“ú–{MRS”NŽŸ‘å‰ï (ƒIƒ“ƒ‰ƒCƒ“ŠJÃ), 2021.12/13-15

613. Long- and Short-Terms Memory Device Using Ti0.96Co0.04O2-d Thin Film
Y. Yamaguchi, T. Takada, H. Ito, T. Tsuchiya and T. Higuchi
“ú–{MRS”NŽŸ‘å‰ï (ƒIƒ“ƒ‰ƒCƒ“ŠJÃ), 2021.12/13-15

612. Surface Structure and Proton Conduction of Ce0.90Gd0.10O2-d Thin Film with Oxygen Vacancies
U. Kobayashi, M. Fukuda, G. Notake, T. Kadowaki, H. Ito and T. Higuchi
“ú–{MRS”NŽŸ‘å‰ï (ƒIƒ“ƒ‰ƒCƒ“ŠJÃ), 2021.12/13-15

611. Structural and Neuromorphic I-V Properties of Ti0.99Sc0.01O2-d Thin Films with Oxygen Vacancies
M. Mitsuki, T. Takada, K. Tomiyoshi, Y. Yamaguchi, H. Ito, T. Tsuchiya and T. Higuchi
“ú–{MRS”NŽŸ‘å‰ï (ƒIƒ“ƒ‰ƒCƒ“ŠJÃ), 2021.12/13-15

610. Characterizations of Structure and Ionic conduction of BaCe0.9-xY0.1RuxO3-d Thin Film at medium temperature
C. Takeda, G. Notake, Y. Noutomi, T. Kadowaki and T. Higuchi
“ú–{MRS”NŽŸ‘å‰ï (ƒIƒ“ƒ‰ƒCƒ“ŠJÃ), 2021.12/13-15

609. In situ Manipulation of Magnetic Anisotropy in Magnetite Thin Film, Achieved with an All-solid-state Redox Device
W. Namiki, T. Tsuchiya, M. Takayanagi, T. Higuchi and K. Terabe
2021 International Conference on Solid State Devices and Materials (SSDM 2021)
2021.9/6-9 (ƒIƒ“ƒ‰ƒCƒ“ŠJÃ)

608. In situ Manipulation of Magnetic Anisotropy in Magnetite Thin Film Achieved with an All-solid-state Redox Device
@@ W. Namiki, T. Tsuchiya, M. Takayanagi, T. Higuchi and K. Terabe
@@MEMRISYS2021, Tsukuba, 11/1-4, 2021

607. Material Designs of Oxide Electrolyte and Anode Electrode Films for Solid Oxide Fuel Cell Operating at Medium Temperature
@ Tohru Higuchi (µ‘ҍu‰‰)
@@APSMR-2021, Taipei, 2021.8/21

606. Pt/Ti0.96Co0.04 O2-ƒÂ/Pt”––Œ‚ÌŠE–ʏó‘Ԑ§Œä‚É‚æ‚é’ïRƒXƒCƒbƒ`ƒ“ƒO‚Æ”]Œ^“Á«
‚“c•¶’©, •Ÿ“‡‹gŒ°, “y‰®ŒhŽuA”óŒû“§
@‰ž—p•š—Šw‰ï
@ƒIƒ“ƒ‰ƒCƒ“ŠJÃA2021.9/10-13

605. Pt/Ti1-xFexO2-d/PtƒNƒƒXƒ|ƒCƒ“ƒg\‘¢–Œ‚Ì”]Œ^“I‚È“d—¬‰ž“š
•Ÿ“‡‹gŒ°, Î“cˆê˜Y, –xêOŽi, ‘g“ªLŽu, ”óŒû“§
‰ž—p•š—Šw‰ï
@ƒIƒ“ƒ‰ƒCƒ“ŠJÃA2021.9/10-13

604. ŠiŽq˜c‚ÆŽ_‘fŒ‡Š×‚ðŽ‚ÂBaCe1-x-yPryYxO3-ƒÂ”––Œ‚Ì“ÁˆÙ‚ȃCƒIƒ““`“±«
‘ºàVG–ŸA–ì’|„AŽu‰ê‘å—ºA–xêOŽiA‘g“ªLŽuA”óŒû“§
“d‹C‰»ŠwH‹G‘å‰ïA
ƒIƒ“ƒ‰ƒCƒ“ŠJÃ, 2021.9/8-9

603. ƒXƒpƒbƒ^–@‚É‚æ‚èì»‚µ‚œCe1-xSmxO2-d”––Œ‚Ì’†’ቷˆæ‚É‚š‚¯‚é•\–ʃvƒƒgƒ““`“±«
–ì’|„AŒ‰ª‘å‹MA¬—щE‹žA‘ºàVG–ŸAŽu‰ê‘å—ºA–xêOŽiA‘g“ªLŽuA”óŒû“§
“d‹C‰»ŠwH‹G‘å‰ïA
ƒIƒ“ƒ‰ƒCƒ“ŠJÃ, 2021.9/8-9

602. Room-Temperature Manipulation of Magnetization Direction in Magnetite,
Achieved with an All-solid-state Redox Transistor
Wataru Namiki, Takashi Tsuchiya, Makoto Takayanagi, Tohru Higuchi and Kazuya Terabe
Clustering and Global Challenges (CGC2021) international online conference
2021.4/9

601. ŽíX‚ÌŒÅ/ŒÅŠE–Ê‚É‚š‚¯‚é“d‹C“ñd‘wŒø‰Ê‹y‚Ñ“d‰×ƒLƒƒƒŠƒA[’~Ï‚̐ÓIE“®“I‹““®
‚–ö ^A“y‰® ŒhŽuAˆä‘º «—²A¬o N•vA”óŒû “§AŽ›•” ˆê–í
“d‹C‰»Šw‰ï‘æ88‰ñ‘å‰ïA
ƒIƒ“ƒ‰ƒCƒ“ŠJÃ, 2021.3/23

600. ‘SŒÅ‘ÌŽ_‰»EŠÒŒ³ƒgƒ‰ƒ“ƒWƒXƒ^‚ð—p‚¢‚œFe3O4”––Œ‚ÌŽ¥‰»•ûŒü‚Ì‚»‚̏ꐧŒä
•À–Ø qA“y‰® ŒhŽuAûüúå ^A”óŒû “§AŽ›•” ˆê–í
ŒÅ‘̃CƒIƒjƒNƒX“¢˜_‰ïA2020.12/8-9AƒIƒ“ƒ‰ƒCƒ“ŠJÃ

599. Investigation on Electric Double Layer Effect at Lithium Ion Conducting Solid
Electrolyte/Electrode Interface
M. Takayanagi, T. Tsuchiya, M. Imura, Y. Koide, T. Higuchi and K. Terabe
33rd International Microprocesses and Nanotechnology Conference (MNC 2020)
2020.11/9-12AƒIƒ“ƒ‰ƒCƒ“ŠJÃ

598. Switching Response of Hydrogen-Terminated-Diamond-Based All-Solid-State Electric-Double-Layer Transistor M. Takayanagi, T. Tsuchiya, M. Imura, Y. Koide, T. Higuchi and K. Terabe Prime-2020, Honolulu, 2020.10/4-9

597. Production of Crystal-Oriented Neodymium Silicate Oxyapatite Ceramics and Their Conductivity Y. Tsunoda, K. Kobayashi, T. Higuchi and T. S. Suzuki Prime-2020, Honolulu, 2020.10/4-9@

596. PLD–@‚Ő¬–Œ‚µ‚œYSZ”––Œ‚̍‚ƒvƒƒgƒ““`“±«‚š‚æ‚ѐ¬–Œ•µˆÍ‹C‚ւ̉ΎRŒ^ˆË‘¶«
‚–ö@^C“y‰® ŒhŽu, •À–Ø q, ”óŒû “§, Ž›•” ˆê–í
“d‹C‰»Šw‰ï, 2020.3/17-19, –ŒŒÃ‰®H‹Æ‘åŠw

595. ŒÅ‘Ì“d‰ðŽ¿‚ð—p‚¢‚œ‘SŒÅ‘ÌŽ_‰»EŠÒŒ³ƒfƒoƒCƒX‚É‚æ‚éFe3O4”––Œ‚Ì
Ž¥‰»ƒxƒNƒgƒ‹‚Ì‚»‚̏ꐧŒä
•À–Ø q, “y‰® ŒhŽu, ‚–ö ^, ”óŒû “§, Ž›•” ˆê–í
“d‹C‰»Šw‰ï, 2020.3/17-19, –ŒŒÃ‰®H‹Æ‘åŠw

594.Giant Modulation of Magnetic Anisotropy in Magnetite Thin Film, Achieved with an All-solid-state Redox Transistor
Wataru Namiki, Takashi Tsuchiya, Makoto Takayanagi, Tohru Higuchi and Kazuya Terabe
EMRS Spring Meeting 2020,
2020.5/25-26, France

593.Electric Double Layer Effect and the Strong Suppression at Lithium Ion
Solid Electrolytes/Hydrogenated Diamond Interface
Makoto Takayanagi, Takashi Tsuchiya, Masataka Imura, Yasuo Koide,
Tohru Higuchi and Kazuya Terabe
MANA International 2020 Symposium
2020.3/1-3, International Congress Center EPOCHAL TSUKUBA@

592.Giant Modulation of Magnetic Anisotropy in Magnetite, Achieved with an All-solid-state Redox Transistor
Wataru Namiki, Takashi Tsuchiya, Makoto Takayanagi,Tohru Higuchi, and Kazuya Terabe
MANA International 2020 Symposium
2020.3/1-3, International Congress Center EPOCHAL TSUKUBA@

591.Innovative Performance of Anode Electrode with Electron-Proton Mixed Conduction for
@@Smart-Type Solid Oxide Fuel Cell
@Tohru Higuciiµ‘ҍu‰‰j
2019 GLOBAL RESEARCH EFFORTS ON ENERGY AND NANOMATERIALS(GREEN 2019)
Taipei, 2019.12/20-23

590.Neuromorphic Resistivity Modulation of Pt/Ti0.99Sc0.01O2-d/Pt Cross-point Structure
@Takeshi Fujita, Kinya Kawamura and Tohru Higuci
2019 GLOBAL RESEARCH EFFORTS ON ENERGY AND NANOMATERIALS(GREEN 2019)
Taipei, 2019.12/20-23

589. Controls of Electronic Structure and Metal-Insulator Transition of VO2/NiO Multilayer
Takehiro Imagawa, Kinya Kawamura and Tohru Higuci
2019 GLOBAL RESEARCH EFFORTS ON ENERGY AND NANOMATERIALS(GREEN 2019)
Taipei, 2019.12/20-23
588. Developments of practical electrolyte and anode electrode based on BaCeO3-d thin film for SOFC device
@@@Tohru Higuchi (µ‘ҍu‰‰)
@@@5th Global Summit & Expo on Materials, Photonics & Optical Instruments
@@@Renaissance Kuala Lumpur Hotel, Malaysia, 2019.11/4-5 @

587. Li ƒCƒIƒ“ŒÅ‘Ì“d‰ðŽ¿‚É‚š‚¯‚é“d‹C“ñd‘wŒø‰Ê‚ÌŒŸØ
@@@“y‰®ŒhŽu, ûüúå^, ˆä‘º «—², ¬oN•v, ”óŒû“§, Ž›•”ˆê–í
@@@‘æ15‰ñŒÅ‘̃CƒIƒjƒNƒXƒZƒ~ƒi[
@@@2019.9/1-3, ŒÎ“@Ž ‚т킱ƒNƒ‰ƒu@


586@PLD–@‚Ő¬–Œ‚µ‚œYSZ”––Œ‚̍‚ƒvƒ‰ƒgƒ““`“±‚š‚æ‚ѐ¬–Œ•µˆÍ‹C‚ւ̉ΎRŒ^ˆË‘¶«
@@@ ‚úå@^C@“y‰®ŒhŽuC@•À–؁@qC@”óŒû@“§C@Ž›•”@ˆê–í
@@@ ‘æ15‰ñŒÅ‘̃CƒIƒjƒNƒXƒZƒ~ƒi[
@@@ 2019.9/1-3, ŒÎ“@Ž ‚т킱ƒNƒ‰ƒu

585.Influenc,e of Mn-doping into Single-crystalline BiFeO3 Thin Films on Their Electronic and Local Atomic Structures
@@S, Nakashima, Y. Fuchiwaki, T. Higuchi, Y. Yamamoto, R. Matsumoto, K. Kimura, N. Happo,
@@K. Hayashi, M. Shimizu, and H. Fujisawa
@@International Conference on The Structure of Non-crystalline Materias
@@Port Island, Kobe, 2019.11/3-8

584. Bulk Photovoltaic Effect in BiFeO3 Thin Films for Optical Actuator Application [Invited]
@@S. Nakashima, R. Hayashimoto, T. Higuchi and H. Fujisawa
@@Collaborative Conference on Materials Science and Technology (CCMST) 2019
@@2019.10/14-18,AShanghai in China

583. Inorganic Thin Film-based Ionic Decision-maker for Adaptive Artificial Intelligence Technology
@@D. Etoh, T. Tsuchiya, Y. Kitagawa, M. Takayanagi, T. Tsuruoka, T. Higuchi, K. Terabe
@@International Conference on Solid State Devices and Materials (SSDM-2019)
@@Nagoya University, 2019.9/2-5

582.Analysis of Graphene Oxide and Nafion Nanocomposite Thin Films
@@Yuki Kitagawa and Tohru Higuchi
@@Collaborative Conference on Materials Science and Technology (CCMST) 2019
@@2019.10/14-18,AShanghai in China


581. A Mesoporous SiO2-based Ionic Decision-maker for Solving Multi-armed Bandit Problems
@@D. Etoh, T. Tsuchiya, Y. Kitagawa, M. Takayanagi, Y. Itoh, T. Tsuruoka, T. Higuchi, and K. Terabe
@@32nd International Microprocesses and Nanotechnology Conference(MNC-2019)
@@International Conference Center Hiroshima, 2019.10/28-31

580. In Situ Manipulation of Magnetic Anisotropy in Fe3O4 Thin Film,@achieved with an Artificial Multiferroic Device Using a Solid-State Electrolyte
@@W. Namiki, T. Tsuchiya, M. Takayanagi,T. Higuchi and K. Terabe
@@32nd International Microprocesses and Nanotechnology Conference(MNC-2019)
@@International Conference Center Hiroshima, 2019.10/28-31

579. Oxygen-Tolerant Operation of Solid State Ionic Devices:@Advantage of All-Solid-State Structure in Ionic-Gating
@@D. Nishioka, T. Tsuchiya, T. Higuchi, and K. Terabe
@@32nd International Microprocesses and Nanotechnology Conference(MNC-2019)
@@International Conference Center Hiroshima, 2019.10/28-31

578. Vertically-Structured Ionic Decision-maker for Improved Scalability
@@Y. Kitagawa, T. Tsuchiya, M. Takayanagi, D. Etoh, T. Tsuruoka, T. Higuchi and K. Terabe
@@32nd International Microprocesses and Nanotechnology Conference(MNC-2019)
@@International Conference Center Hiroshima, 2019.10/28-31


577. Oxide Ion and Proton Conduction of Nano-grained YSZ Thin Films Prepared by Pulse Laser Deposition
@@D. Etoh, M. Takayanagi and T. Higuchi
@@2019 International Symposium for Advanced Materials Research (ISAMR 2019)
@@Kaohsiung, Taiwan, 2019.8/22-25


576. Developments of New electrolyte and Anode Electrode Materials for Smart-Type SOFC Device Operating at Medium Temperature
@@Tohru Higuchi (Keynote Speaker)
@@2019 International Symposium for Advanced Materials Research (ISAMR 2019)
@@Kaohsiung, Taiwan, 2019.8/22-25

575. Electronic Structure and Ionic Conduction of Sm-doped SrCeO3 Thin film with Lattice Distortion
@@T. Kono, K. Kawamura, R. Yukawa, K. Horiba, H. Kumigashira and T. Higuchi
@@2019 International Symposium for Advanced Materials Research (ISAMR 2019)
@@Kaohsiung, Taiwan, 2019.8/22-25

574. Structural and Photocatalyst Properties of NiO-nanoparticle/TiO2/NiO Multilayer
J. Oikawa, T. Kawaguchi and T. Higuchi
Collaborative Conference on Materials Science and Technology (CCMST) 2019
2019.10/14-18,AShanghai in China

573. Oxide Ion Conduction of BaCe0.9-x(Pr,Ti,Zr)xY0.1O3-ƒÂ Electrolyte Thin Films for SOFC Device Prepared by RF Magnetron Sputtering
T. Hashimoto, T. Yamada, K. Kawamura and T. Higuchi
Collaborative Conference on Materials Science and Technology (CCMST) 2019
2019.10/14-18,AShanghai in China

572. Electrical-Pulse-Induced Resistivity Modulation in Pt/Ti1-xFexO2-ƒÂ/Pt Multilayer Device
J. Ishida, K. Kawamura and T. Higuchi
Collaborative Conference on Materials Science and Technology (CCMST) 2019
2019.10/14-18,AShanghai in China

571. Electron?Proton Mixed Conduction in BaCe0.8Ru0.1Y0.1O3?ƒÂ thin film
Y. Yanagida1 and T. Higuchi
Collaborative Conference on Materials Science and Technology (CCMST) 2019
2019.10/14-18,AShanghai in China

570. Anomalous Metal-Insulator Transition of Orientation Controlled V2O3 thin film
H. Hamada, E. Yamamoto, T. Yamada, K. Kawamura and T. Higuchi
Collaborative Conference on Materials Science and Technology (CCMST) 2019
2019.10/14-18,AShanghai in China

@

569.‘SŒÅ‘ÌŽ_‰»EŠÒŒ³ƒfƒoƒCƒX‚É‚æ‚éFe3O4”––Œ‚ÌŽ¥‹CˆÙ•û«‚Ì‚»‚̏ꐧŒä
•À–؍qC“y‰®ŒhŽu, ûüúå^, ”óŒû“§, Ž›•”ˆê–í
‘æ80‰ñ‰ž—p•š—Šw‰ïH‹GŠwpu‰‰‰ï
2019.9/18-20, –kŠC“¹‘åŠw

568. NiO/ Al2O3ã‚É‚š‚¯‚éVO2”––Œ‚Ì“dŽq\‘¢‚Æ‹à‘®-â‰‘Ì“]ˆÚ‚̐§Œä
¡ì—Y—m, ‹yìƒ•œ, ŽR“c—fŒö,“’ì—Ž,–xêOŽi, ‘g“ªLŽu, ”óŒû“§
‘æ80‰ñ‰ž—p•š—Šw‰ïH‹GŠwpu‰‰‰ï
2019.9/18-20, –kŠC“¹‘åŠw

567.Pt/Ti0.99Sc0.01O2-d/PtƒNƒƒXƒ|ƒCƒ“ƒg\‘¢–Œ‚Ì”]Œ^“I‚È’ïR•Ï‰»“Á«
“¡“cŒ’Žj, ì‘º‹Ó–ç, ŽR“c—fŒö, “’ì—Ž, –xêOŽi,‘g“ªLŽu, ”óŒû“§
‘æ80‰ñ‰ž—p•š—Šw‰ïH‹GŠwpu‰‰‰ï
2019.9/18-20, –kŠC“¹‘åŠw

566.LiƒCƒIƒ““`“±«ŒÅ‘Ì“d‰ðŽ¿‚É‚š‚¯‚é“d‹C“ñd‘wŒø‰Ê‚ÌŠm”F
“y‰®ŒhŽuC‚úå ^Cˆä‘º «—²C¬oN•vC”óŒû “§CŽ›•” ˆê–í
‘æ80‰ñ‰ž—p•š—Šw‰ïH‹GŠwpu‰‰‰ï
2019.9/18-20, –kŠC“¹‘åŠw

565.In-situ Control of Hole Density in Hydrogen-Terminated Diamond Achieved with All-Solid-State Electric Double Layer Transistor (ƒ|ƒXƒ^[Ü‚ðŽóÜ)
T. Tsuchiya, M. Takayanagi, M. Imura, Y. Koide, T. Higuchi, K. Terabe
22nd International Conference on Solid State Ionics (SSI-22)
2019.6/17-20, PyeongChang, Korea


564. Fabrication of dense ceramics and their total conductivity of yttrium-stabilized lanthanum germanate oxyapatite by slip casting in a strong magnetic field
T. Terai, K. Kobayashi, T. Higuchi,1 and T. S. Suzuki
The 13th Pacific Rim Conference of Ceramic Societies (PACRIM13)
October 27 - November 1, 2019, Okinawa Convention Center, Japan


563. Dense Ceramic Fabrication and Conductivity Measurement of Strontium doped Lanthanum Yttrium Perovskite
Y. Tsunoda, K. Kobayashi, T. Higuchi, and T. S. Suzuki
The 13th Pacific Rim Conference of Ceramic Societies (PACRIM13)
October 27 - November 1, 2019, Okinawa Convention Center, Japan


562. Resistiviy Switching of Vanadium Oxide Thin Film by Insertion/Desertio‚Ž of Ion
@@@Thoru@Higuchiiµ‘ҍu‰‰j
@@@ICSON-2019
@@@2019.8/20-21CBarce‚Œona@‚‰‚Ž@‚r‚‚…‚‰‚Ž



561. @Total conductivity of yttria-stabilized Ianthanum germanate fabricated by
@@@ @solid-state reaction method
@@@@@T.@Terai, K Kobayashi, T Higychi,T.S. Suzuki
@@@@@Materials research Meeting 2019 (MRM-209)
@@@@@2019D12/10-14, Yokohama, Japan



 560. Surface Proton Conductivity of Sm-doped Ceria with Lattice Disitortion@
@@@@Daiki NishiokaCTunetomo YamadaCWataru Namiki, Takeshi Fujita, Takashi
@@@@Tsuchiya and Tohru Higuchi (µ‘ҍu‰‰j
@@@@EMN Jeju Meeting on Ceramics@
@@@@2019.5/20-21CJeju in Korea



559. Atomic and Electronic Structures of Single Crystal Mn-doped BiFeO3 Thin Films
@@S.Nakashima, Y.Futiwaki, T.HIguchi, Y.Yamamoto,R,.Matsumoto, K.KImura,
@@N.Happo, K.Hayashi, @M..Shimizu, and H.Fuzisawa
@@2019 ISAF-ICE-EMF-IWPM
@@joint Cunference
@@2019.7/24-19, Switzerland

558. Long-term and Short-term Memory Device Using Pt/Ti0.99Sc0.01O2-ƒÂ/Pt Cross Point Structure
@@@K. Kawamura and T. Higuchi (µ‘ҍu‰‰j
@@@EMN Jeju Meeting on Ceramics
@@@2019.5/20-21, Jeju in Korea

557. Brain-Type Memory Device Using Oxide Thin Film
@@@Thoru Higuchi(µ‘ҍu‰‰j
@@@CCMST-2019
@@@2019.10/14-18
,AShanghai in China
556. New Anode Material with Electron-Proton Mixed Conduction for SOFC Device
@@@Tohru Higuchi (µ‘ҍu‰‰)
@@@EMN Rome Meeting 2019, @2019.5/13-17, in Rome, Italy

555. Strucural and Electrical Properties of p-type TiO2 Thin Film Realized by Carrier and Lattice Controls
@@@Tohru Higuchi (µ‘ҍu‰‰)
@@@2019 Collaborative Conference on Materials Research (CCMR)
@@@2019.6/3-6, Gyeonggi-do, Korea

554. High Proton Conduction of SrCe0.80Sm0.20O3 Thin Film Prepared by RF Magnetron Sputtering
@@@T. Kono, T. Yamada, D. Nishioka and T. Higuchi
@@@Asia-Pacific Conference on Engineering & Natural Sciences (APICENS 2019)
@@@2019.3/19-21, Bangkok, Thailand

553. Resistivity Control of Epitaxial Ca1-xSrxVO3 Thin Film Achieved by H+ or Li+ Transport
@@@M. Takayanagi, T. Tsuchiya, T. Yamada and T. Higuchi
@@@Asia-Pacific Conference on Engineering & Natural Sciences (APICENS 2019)
@@@2019.3/19-21, Bangkok, Thailand


m2018”Nn
552. Ionic decision-maker using electrolyte-semiconductor transition of graphene oxide
@@Y. Kitagawa, T. Tsuchiya, T. Higuchi, and K. Terabe
@@“ú–{MRS”NŽŸ‘å‰ïA–k‹ãB‘Û‰ï‹cêA2018.12/18-19

551. Electron Conduction of TiO2 Thin Film activated by Sc3+ Substitution
@@M. Sekine, H. Tanisaka, A. Takahashi, T. Yamada, R. Yukawa, K. Horiba, H. Kumigashira and T. Higuchi
@@“ú–{MRS”NŽŸ‘å‰ïA–k‹ãB‘Û‰ï‹cêA2018.12/18-19

550. Ionic conductivity of grain-controlled BaPr1-xYxO3-d thin film prepared by RF magnetron sputtering
@@A. Tamai, T. Yamada, R. Yukawa, K. Horiba, H. Kumigashira and T. Higuchi
@@“ú–{MRS”NŽŸ‘å‰ïA–k‹ãB‘Û‰ï‹cêA2018.12/18-19

549. Carrier control of vanadium oxide thin film by insertion/desertion of Li+ ion
@@A. Takahashi, M.Takayanagi, T. Yamada, T. Tsuchiya, K. Terabe and T. Higuchi
@@“ú–{MRS”NŽŸ‘å‰ïA–k‹ãB‘Û‰ï‹cêA2018.12/18-19

548. Generation of Surface Proton Conduction of Sm doped CeO2-d Thin Films with Lattice Distortion
@@D. Nishioka, W. Namiki, T. Yamada, R. Yukawa, K. Horiba, H. Kumigashira and T. Higuchi
@@“ú–{MRS”NŽŸ‘å‰ïA–k‹ãB‘Û‰ï‹cêA2018.12/18-19

547. I-V characteristics of Pt/Ti0.9Fe0.1O2-d/Pt thin film with electron-ion mixed conduction
@@J. Ishida, A. Takahashi, T. Yamada, R. Yukawa, K. Horiba, H. Kumigashira and T. Higuchi
@@“ú–{MRS”NŽŸ‘å‰ïA–k‹ãB‘Û‰ï‹cêA2018.12/18-19

546. Development of oxide-based ionic decision-maker
@@D. Etoh, T. Tsuchiya, Y. Kitagawa, T. Tsuruoka, T. Higuchi, and K. Terabe
@@“ú–{MRS”NŽŸ‘å‰ïA–k‹ãB‘Û‰ï‹cêA2018.12/18-19

545. Tuning of Hole Carrier Density in Hydrogen-Terminated Diamond Achieved with All-Solid-State Electric Double Layer Transistor
@@M. Takayanagi, T. Tsuchiya, M. Imura, Y. Koide, T. Higuchi, and K. Terabe
@@“ú–{MRS”NŽŸ‘å‰ïA–k‹ãB‘Û‰ï‹cêA2018.12/18-19

544. Oxide Ion and Proton Conduction Controlled in Nano-grained Yttria Stabilized ZrO2 Thin Films Prepared by Pulse Laser Deposition
@@D. Etoh, T. Tsuchiya, M. Takayanagi, T. Higuchi, and K. Terabe
@@31st International Microprocesses and Nanotechnology Conference (MNC 2018)
@@2018.11/13-16, Sapporo, Japan

543. Conductivity Modulation in SrVO3-based All-solid-state Redox Transistor
@@with Ion Transport of Li+ or H+
@@M. Takayanagi, T. Tsuchiya, W. Namiki, Y. Kitagawa, T. Higuchi, and K. Terabe
@@31st International Microprocesses and Nanotechnology Conference (MNC 2018)
@@2018.11/13-16, Sapporo, Japan

542. ƒpƒ‹ƒXƒŒ[ƒU‘͐ϖ@‚Ő¬–Œ‚µ‚œYSZ ”––Œ‚̃vƒƒgƒ““`“±“x‚̐¬–Œ•µˆÍ‹CˆË‘¶«
@@]“¡‘å‹M, “y‰®ŒhŽu, ‚úå^, ”óŒû“§, Ž›•”ˆê–í
@@‘æ14‰ñ ŒÅ‘̃CƒIƒjƒNƒXƒZƒ~ƒi[, 2018.9/2-4, ‰zŒã“’‘ò

541. Ca1-xSrxVO3”––Œ‚É‚š‚¯‚é‹à‘®â‰‘Ì“]ˆÚ‚̊ˑ¶«
@@‚–ö^C“y‰®ŒhŽu, •À–؍q, –kì—E‹C, ”óŒû“§, Ž›•”ˆê–í
@@‘æ14‰ñ ŒÅ‘̃CƒIƒjƒNƒXƒZƒ~ƒi[, 2018.9/2-4, ‰zŒã“’‘ò

540. ŠiŽq˜c“±“ü‚É‚æ‚éSm-doped CeO2”––Œ‚Ì•\–ʃvƒƒgƒ““`“±«‚Ì”­Œ»
@@Œ‰ª‘å‹MC•À–؍qCŽR“c—fŒöC“’ì—ŽC–xêOŽiC‘g“ªLŽuC”óŒû“§
@@‘æ14‰ñ ŒÅ‘̃CƒIƒjƒNƒXƒZƒ~ƒi[, 2018.9/2-4, ‰zŒã“’‘ò

539. Nd0.6Sr0.4FeO3-ƒÂ‚Ì”––Œ‰»‚É‚æ‚é“d‹C“Á«E“dŽq\‘¢•Ï‰»
@@•À–؍q, ûüúå^, “y‰®ŒhŽu, âÀŒŽœl, –xêOŽi, ‘g“ªLŽu, ”óŒû“§
@@‘æ14‰ñ ŒÅ‘̃CƒIƒjƒNƒXƒZƒ~ƒi[, 2018.9/2-4, ‰zŒã“’‘ò

538. Inserted-cation-dependent Device Characteristic of SrVO3-based All-solid-state Redox Transistor
@@M. Takayanagi, T. Tsuchiya, W. Namiki, T. Higuchi, and K. Terabe
@@SSDM-2018, Univ. Tokyo, Japan, 2018.9/9-13

537. ŠiŽq˜c‚ðŽ‚ÂSm-doped SrCeO3ƒXƒpƒbƒ^”––Œ‚̍\‘¢EƒCƒIƒ““`“±«
@ @‚–ì‹M—T, ŽR“c—fŒö, “’ì—Ž, –xêOŽi, ‘g“ªLŽu, ”óŒû“§
@@“d‹C‰»ŠwH‹G‘å‰ïA‹à‘ò‘åŠwA2018.9/25-26

536. Sm-doped CeO2”––Œ‚Ì350ŽˆÈ‰º‚É‚š‚¯‚é“ñŽŸŒ³•\–ʃvƒƒgƒ““`“±«
@@Œ‰ª‘å‹M, •À–؍q, ŽR“c—fŒö, “’ì—Ž, –xêOŽi, ‘g“ªLŽu, ”óŒû“§
@@“d‹C‰»ŠwH‹G‘å‰ïA‹à‘ò‘åŠwA2018.9/25-26

535. ƒXƒpƒbƒ^–@‚É‚æ‚èì»‚µ‚œBaCe0.85Zr0.05Y0.10O3”––Œ‚Ì“dŽq\‘¢‚ƃCƒIƒ““`“±«
@@’JâLé, ŠÖª³‹M, ŽR“c—fŒö, “’ì—Ž, –xêOŽi, ‘g“ªLŽu, ”óŒû“§
@@“d‹C‰»ŠwH‹G‘å‰ïA‹à‘ò‘åŠwA2018.9/25-26

534. ‘SŒÅ‘ÌŽ_‰»ŠÒŒ³ƒgƒ‰ƒ“ƒWƒXƒ^‚É‚æ‚éSrVO3”––Œ‚Ì“±“d—Š•Ï’²
@@‚–ö^C“y‰®ŒhŽu, •À–؍q, ”óŒû “§, Ž›•”ˆê–í
@@“d‹C‰»ŠwH‹G‘å‰ïA‹à‘ò‘åŠwA2018.9/25-26

533. TiO2ã‚ÉŒ`¬‚µ‚œNiOƒiƒm—±Žq‚É‚æ‚éŒõG”}“Á«‚ւ̉e‹¿
@@‹yìƒ•œ, ŠÖª³‹M, ŽR“c—fŒö ,“’ì—Ž, –xêOŽi, ‘g“ªLŽu, ”óŒû“§
@@‰ž—p•š—Šw‰ïA–ŒŒÃ‰®‘Û‰ï‹cêA2018.9/18-22

532. ƒXƒpƒbƒ^–@‚É‚æ‚èì»‚µ‚œBa(Ce1-xTix)yY1-yO3”––Œ‚̉»Šw“IˆÀ’萫
@@‹Ž–{’q”V, ‚–ö^, ŽR“c—fŒö , –xêOŽi, “’ì—Ž,‘g“ªLŽu, ”óŒû“§
@@‰ž—p•š—Šw‰ïA–ŒŒÃ‰®‘Û‰ï‹cêA2018.9/18-22

531. RFƒ}ƒOƒlƒgƒƒ“ƒXƒpƒbƒ^–@‚ō쐻‚µ‚œTi0.9Fe0.1O2-ƒÂ”––Œ‚Ì“dŽq\‘¢‚ÆI-V“Á«
@@Î“cˆê˜Y, Œ‰ª‘å‹M, ŽR“c—fŒö, “’ì—Ž, –xêOŽi, ‘g“ªLŽu, ”óŒû“§
@@‰ž—p•š—Šw‰ïA–ŒŒÃ‰®‘Û‰ï‹cêA2018.9/18-22

530. La0.67Sr0.33MnO3(100)”––Œ‚̃LƒƒƒŠƒA\‚𐧌䂵‚œ‘SŒÅ‘̃CƒIƒjƒNƒXƒfƒoƒCƒX
@@ì‘º‹Ó–çC“y‰®ŒhŽu, ”óŒû“§, Ž›•”ˆê–í
@@‰ž—p•š—Šw‰ïA–ŒŒÃ‰®‘Û‰ï‹cêA2018.9/18-22

529. Yb-doped BaPr0.9Yb0.1O3-?”––Œ‚Ì“dŽq-ƒCƒIƒ“¬‡“`“±«‚Æ“dŽq\‘¢
@@à_“cGK, ŽR“c—fŒö, “’ì—Ž, –xêOŽi, ‘g“ªLŽu, ”óŒû“§
@@‰ž—p•š—Šw‰ïA–ŒŒÃ‰®‘Û‰ï‹cêA2018.9/18-22

528. ‹­—U“d‘̃oƒ‹ƒNŒõ‹N—ÍŒø‰Ê‚Æ‚»‚ê‚ð—p‚¢‚œƒAƒ`ƒ…ƒG[ƒ^
@@’†“ˆœ“ñ, —Ñ–{—³, “¡‘ò_ŒP, Ž…Ÿ, ”óŒû“§,@•ÛˆäW, –؉º–L•F
@@ƒZƒ‰ƒ~ƒbƒNƒX‹Š‰ïŠÖŒŽx•”u‰‰‰ïA•P˜HEŒ‚Í‚è‚Ü’nêŽY‹ÆƒZƒ“ƒ^[A2018.7/27

527.@@ƒCƒbƒgƒŠƒEƒ€‚ð’uŠ·‚µ‚œƒIƒLƒVƒAƒpƒ^ƒCƒgŒ^ƒ‰ƒ“ƒ^ƒ“ƒQƒ‹ƒ}ƒl[ƒg‚Ìãk–§ƒZƒ‰ƒ~ƒbƒNƒX»‘¢‚Æ‘S“d‹C“`“±“x‘ª’è
@@@Ž›ˆä ‹MÆ, ¬—Ñ Ž, —é–Ø ’B, ”óŒû “§
@@@“ú–{ƒZƒ‰ƒ~ƒbƒNƒX‹Š‰ï@H‹GƒVƒ“ƒ|ƒWƒEƒ€, –ŒŒÃ‰®H‹Æ‘åŠwC2018.9/5-7

526. Increasing Coercivity of Ferromagnetic Zinc Oxide with Thermal Acetylene Treatment
@@ Luke Jappinen, Jarno Salonen and Tohru Higuchi
@@ IEEE NANO 2018, Cork, Ireland, 23-26 July 2018

525. Growth of Vanadium Oxide Thin Film by RF Magnetron Sputtering Using Oxygen Radical
@@@Tohru Higuchi (µ‘ҍu‰‰)
@@@Energy Materials and Nanotechnology (EMN) 2018
@@@Vienna, Austria, 2018. 6/18-22

524. Evidence of Acceptor Doping to BiFeO3 Thin Films by Mn doping and Their Bulk Photovoltaic Effect
@@S. Nakashima, K. Takayama, H. Fujisawa, T. Higuchi, A. Yasui, T. Kinoshita and M. Shimizu
@@2018 ISAF-FMA-AMF-AMEC-PFM (IFAAP) Joint Conference
@@International Conference Center of Hiroshima, 2018.5/27-6/1

523.@@ŒÅ‘Š–@‚É‚æ‚éƒCƒbƒgƒŠƒEƒ€‚ð’uŠ·‚µ‚œƒIƒLƒVƒAƒpƒ^ƒCƒgŒ^ƒ‰ƒ“ƒ^ƒ“ƒQƒ‹ƒ}ƒl[ƒg‚Ìãk–§‘̂̍쐻
@@@Ž›ˆä ‹MÆ, ¬—Ñ Ž, —é–Ø ’B, ”óŒû “§
@@@•²‘Ì•²–––è‹àŠw‰ï, ‹ž“s‘åŠwC2018.5/13-17

522. ‘SŒÅ‘ÌŽ_‰»ŠÒŒ³ƒgƒ‰ƒ“ƒWƒXƒ^‚ð—p‚¢‚œSrVO3”––Œ‚Ì“±“d—Š•Ï’²
@@‚–ö^C“y‰®ŒhŽu, •À–؍q, ”óŒû“§, Ž›•”ˆê–í
@@‰ž—p•š—Šw‰ïA‘ˆî“c‘åŠwA2018.3.17-19

521. Žº‰·•œ–ʃz[ƒ‹Œø‰Ê‚É‚æ‚éLa0.67Sr0.33MnO3(100)”––Œ‚ÌŽ¥‹CˆÙ•û«
@@ì‘º‹Ó–çC“y‰®ŒhŽu, –ªŒŽœl, –xêOŽi,‘g“ªLŽu, Ž›•”ˆê–í, ”óŒû “§
@@‰ž—p•š—Šw‰ïA‘ˆî“c‘åŠwA2018.3.17-19

520. Nd0.6Sr0.4FeO3-ƒÂ”––Œ‚̘c‚ÝŒø‰Ê‚Æ“d‹C“Á«
@@•À–؍q, ûüúå^, “y‰®ŒhŽu, âÀŒŽœl, –xêOŽi, ‘g“ªLŽu, ”óŒû“§
@@‰ž—p•š—Šw‰ïA‘ˆî“c‘åŠwA2018.3.17-19

519Redox”œ‰ž‚ð—˜—p‚µ‚œƒAƒ‚ƒ‹ƒtƒ@ƒXWO3-x”––Œ‚̃LƒƒƒpƒVƒ^ƒ“ƒX‘fŽq
@@Žðˆä‹MO, ™–{“V, —Ñ”Ž—m, –¥ŒŽœl, ‘g“ªLŽu, ”óŒû“§
@@‰ž—p•š—Šw‰ïA‘ˆî“c‘åŠwA2018.3.17-19

518. YSZŠî”ã‚ɍ쐻‚µ‚œVO2”––Œ‚Ì‹à‘®]â‰‘Ì“]ˆÚŒ»Û‚ÌŠÏ‘ª
@@X“cI, ’O–ì—F”Ž, –¥ŒŽœl, –xêOŽi, ‘g“ªLŽu, ”óŒû“§
@@‰ž—p•š—Šw‰ïA‘ˆî“c‘åŠwA2018.3.17-19

517. Sm-doped CeO2-d”––Œ‚Ì’†’ቷˆæ‚É‚š‚¯‚é•\–ʃCƒIƒ““`“±«
@@Œ‰ª‘å‹M, •À–؍q, –¥ŒŽœl, ‘g“ªLŽu, ”óŒû“§
@@‰ž—p•š—Šw‰ïA‘ˆî“c‘åŠwA2018.3.17-19

516. Resistivity Control of VO2 Based All-Solid-State Redox Transistors Achieved by Li+ Transport
@@Jun-ichiro Ishida, Atsushi Takahashi, Takashi Tsuchiya, and Tohru Higuchi
@@MANA International Symposium 2018
@@Epochal Tsukuba, Japan, 2018.3/5-7

515. Correlated Metal SrVO3 Based All-Solid-State Redox Transistors Achieved by Li+ or H+ Transport
@@M. Takayanagi, T. Tsuchiya, W. Namiki,T. Higuchi and K. Terabe
@@MANA International Symposium 2018
@@Epochal Tsukuba, Japan, 2018.3/5-7

514. Nanoionics-Based Neuromorphic Device with Pt/TiO2-d/Pt Multilayer Structure
@@K. Kawamura, T. Tsuchiya, K. Terabe and T. Higuchi
@@MANA International Symposium 2018
@@Epochal Tsukuba, Japan, 2018.3/5-7


513. Development of nanoionics type variable capacitor for high frequency wireless communication and its Electrical properties
@@@T. Sugimoto and T. Higuchi
@@@APICENS, taipei, 2018.3/12-14


512. “î‚wü•ªŒõ‚É‚æ‚éVO2”––Œ‚Ì‹à‘®-â‰‘Ì“]ˆÚŒ»Û‚ÌŠÏ‘ª
@@@’O–ì—F”Ž, ‚‹Ž“Ä, âÀŒŽœl, –xêOŽi, ‘g“ªLŽu, ”óŒû“§
@@@“ú–{•úŽËŒõŠw‰ïA2018.1/8-10A‚‚­‚΍‘Û‰ï‹cê


511. ‰¿”§Œä‚µ‚œV6O13”––Œ‚Ì“dŽq\‘¢
@@@‚‹Ž“āC’O–ì—F”Ž, âÀŒŽœl, –xêOŽi, ‘g“ªLŽu, ”óŒû“§
@@@“ú–{•úŽËŒõŠw‰ïA2018.1/8-10A‚‚­‚΍‘Û‰ï‹cê

510. Ca1-xSrxVO3”––Œ‚Ì“îXüEdXüŒõ“dŽq•ªŒõ
@@@‚–ö^, “y‰®ŒhŽu, •À–؍q, ã“c–ΓT, –ªŒŽœl, –xêOŽi, ‘g“ªLŽu, ”óŒû“§
@@@“ú–{•úŽËŒõŠw‰ïA2018.1/8-10A‚‚­‚΍‘Û‰ï‹cê

509. “î‚wü•ªŒõ‚É‚æ‚éNd1-xSrxFeO3‚Ì“dŽq\‘¢
@@@•À–؍q, ‚–ö^,–ªŒŽœl, –xêOŽi, ‘g“ªLŽu, ”óŒû “§
@@@“ú–{•úŽËŒõŠw‰ïA2018.1/8-10A‚‚­‚΍‘Û‰ï‹cê


m2017”Nn

508. Neuromorphic Transistor Based on Redox Reaction of WO3 Thin Film
@@@M. Jayabalan, K. Kawamura, M. Takayanagi, T. Tsuchiya, T. Higuchi, R. Jayavel, K. Terabe
@@@“ú–{MRS”NŽŸ‘å‰ïA2017.12/5-7, ‰¡•lî•ñ•¶‰»ƒZƒ“ƒ^[


507. ‚Žü”gƒƒCƒ„ƒŒƒXƒRƒ~ƒ…ƒjƒP[ƒVƒ‡ƒ“‚Ì‚œ‚߂̃iƒmƒCƒIƒjƒNƒXŒ^‰Â•Ï—e—Ê‘fŽq‚ÌŠJ”­
@@@™–{“V, “y‰®ŒhŽu, Ž›•”ˆê–í, ”óŒû“§
@@@“Œ‹ž—‰È‘åŠw”]ŠwÛŒ€‹†•”–å ‘æ1‰ñŒöŠJƒVƒ“ƒ|ƒWƒEƒ€
@@@2017.10/21, “Œ‹ž—‰È‘åŠwŠ‹üƒLƒƒƒ“ƒpƒX


506. Neuromorphic Transistor Achieved by Redox Reaction of WO3 Thin Film
@@@M. Jayabalan, K. Kawamura, M. Takayanagi, T. Tsuchiya, T. Higuchi, R. Jayavel, K. Terabe
@@@2017 International Conference of Solid State Devices and Materials (SSDM-2017)
@@@Sendai International Center, 2017.9/21





m2014”N“xn